Silicon-power CCS AB 53N30_N-Type Semiconductor Discharge Switch Manuale Utente

Navigare online o scaricare Manuale Utente per Hardware Silicon-power CCS AB 53N30_N-Type Semiconductor Discharge Switch. Silicon Power CCS AB 53N30_N-Type Semiconductor Discharge Switch, SOT-227 User Manual Manuale Utente

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Description
Package
Size - 9
Schematic Symbol
Features
This current controlled Solidtron
TM
(CCS) semiconductor
discharge switch is an n-type Thyristor in a high performance
SOT-227 package. The device gate is similar to that found on a
traditional GTO Thyristor.
The CCS features the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with high
di/dt capability. This semiconductor is intended to be a solid
state replacement for spark or gas type devices commonly used
in pulse power applications.
3000V Peak Off-State Voltage
5 kA Repetitive Ipk Capability
25 KA/uS di/dt Capability
Low On-State Voltage
Low trigger current
Low Inductance Package
Anode (A)
Gate (G)
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
CCSAB53N30A10
Solidtron
TM
N-Type Semiconductor Discharge Switch, SOT-227
Data Sheet (Rev 0 - 03/30/09)
Absolute Maximum Ratings
SYMBOL VALUE UNITS
Peak Off-State Voltage
V
DRM
3 kV
Peak Reverse Voltage
V
RRM
-5 V
Off-State Rate of Change of Voltage Immunity*
dv/dt
1 kV/uSec
Continuous Anode Current at Tj = 125
o
C
I
A110
50 A
Repetitive Peak Anode Current (Pulse Width=10uSec)
I
ASM
5.0 kA
Nonrepetitive Peak Anode Current (Pulse Width=10uSec)
I
ASM
8 kA
Rate of Change of Current
dI/dt
25 kA/uSec
Peak Gate Current (1 uS)
IGpk
50 A
Max. Reverse Gate-Cathode Voltage
V
GR
-9 V
Maximum Junction Temperature
T
JM
125
o
C
Maximum Soldering Temperature (Installation) 260
o
C
This SILICON POWER product is protected by one or more of the following U.S. Patents:
CAO 05/28/09
5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890
5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635
5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773
5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957
4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206
5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671
4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668
5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174
4,644,637
4,374,389
4,750,666
4,429,011
5,293,070
25 KA/uS di/dt Capability
Low Inductance Package
Cathode (K)
CAO 05/28/09
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Sommario

Pagina 1 - CCSAB53N30A10

DescriptionPackageSize - 9Schematic SymbolFeaturesThis current controlled SolidtronTM(CCS) semiconductor discharge switch is an n-type Thyristor in a

Pagina 2

Performance Characteristics TJ=25oC unless otherwise specifiedMeasurementsParameters Symbol Test Conditions Min. Typ. Max. UnitsAnode to Cathode

Pagina 3

Typical Performance Curves (Continued)Figure 3. Predicted I2t data for various number of discharge cycles. Pulses are assumed rectangular.The device j

Pagina 4

Application NotesT=125oC, VGE=15VTC=125oC, VGE=15VA1. Pulse Transformer GatingA preferred method of isolation, a pulse transformer may be used topred

Pagina 5

Packaging and HandlingDimensions and Terminal Assignments1. ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES IN AL

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